UPD48576236F1-E18-DW1-A
![quality [#varpname#] factory](/images/load_icon.gif){kind=icon}
manufacturer:
Renesas
Description:
IC DRAM 576MBIT HSTL 144TFBGA
Category:
Memory
Specifications
Category:
Integrated Circuits (ICs)
Memory
Memory
Memory Size:
576Mbit
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Bulk
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
HSTL
Write Cycle Time - Word, Page:
-
Supplier Device Package:
144-TFBGA (11x18.5)
Memory Type:
Volatile
Mfr:
Renesas
Clock Frequency:
533 MHz
Voltage - Supply:
1.7V ~ 1.9V
Access Time:
300 Ps
Package / Case:
144-TBGA
Memory Organization:
16M X 36
Operating Temperature:
0°C ~ 95°C (TC)
Technology:
LLDRAM
Base Product Number:
UPD48576236
Memory Format:
DRAM
Introduction
LLDRAM Memory IC 576Mbit HSTL 533 MHz 300 ps 144-TFBGA (11x18.5)
RELATED PRODUCTS
HN58C256AP10E
HN58C256 - PARALLEL 256KBIT EEPR
UPD48576209F1-E24-DW1-E2-A
IC DRAM 576MBIT HSTL 144TFBGA
R1LV0108ESA-5SI#B1
R1LV0108E - 1Mb Advanced LPSRAM
R1LV1616HSA-5SI#B1
R1LV1616HSA - Wide Temperature R
HN58C257AT85E
HN58C257 - PARALLEL 256KBIT EEPR
M5M5V108DVP-70H#BT
STANDARD SRAM, 128KX8, 70NS, CMO
R1WV6416RBG-5SI#B0
R1WV6416RBG-5SI - Low Power SRAM
HN58V66ATI10E
HN58V66 - PARALLEL 64KBIT EEPROM
R1LP5256ESA-5SI#S1
R1LP5256 - 256Kb Advanced LPSRAM
R1RW0416DSB-2PI#D1
R1RW0416D-I - Wide Temperature R
| Image | Part # | Description | |
|---|---|---|---|
|
|
HN58C256AP10E |
HN58C256 - PARALLEL 256KBIT EEPR
|
|
|
|
UPD48576209F1-E24-DW1-E2-A |
IC DRAM 576MBIT HSTL 144TFBGA
|
|
|
|
R1LV0108ESA-5SI#B1 |
R1LV0108E - 1Mb Advanced LPSRAM
|
|
|
|
R1LV1616HSA-5SI#B1 |
R1LV1616HSA - Wide Temperature R
|
|
|
|
HN58C257AT85E |
HN58C257 - PARALLEL 256KBIT EEPR
|
|
|
|
M5M5V108DVP-70H#BT |
STANDARD SRAM, 128KX8, 70NS, CMO
|
|
|
|
R1WV6416RBG-5SI#B0 |
R1WV6416RBG-5SI - Low Power SRAM
|
|
|
|
HN58V66ATI10E |
HN58V66 - PARALLEL 64KBIT EEPROM
|
|
|
|
R1LP5256ESA-5SI#S1 |
R1LP5256 - 256Kb Advanced LPSRAM
|
|
|
|
R1RW0416DSB-2PI#D1 |
R1RW0416D-I - Wide Temperature R
|
Send RFQ
Stock:
MOQ: