R1RW0416DSB-2PI#D1
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manufacturer:
Renesas
Description:
R1RW0416D-I - Wide Temperature R
Category:
Memory
Specifications
Category:
Integrated Circuits (ICs)
Memory
Memory
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Series:
R1RW0416DI
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
12ns
Supplier Device Package:
44-TSOP II
Memory Type:
Volatile
Mfr:
Renesas
Memory Size:
4Mbit
Voltage - Supply:
3V ~ 3.6V
Package / Case:
44-TSOP (0.400", 10.16mm Width)
Memory Organization:
256K X 16
Operating Temperature:
-40°C ~ 85°C (TA)
Technology:
SRAM - Asynchronous
Access Time:
12 Ns
Memory Format:
SRAM
Introduction
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
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