P2114AL4
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manufacturer:
Intel
Description:
IC SRAM 4KBIT PARALLEL 18DIP
Category:
Memory
Specifications
Category:
Integrated Circuits (ICs)
Memory
Memory
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
200ns
Supplier Device Package:
18-DIP
Memory Type:
Volatile
Mfr:
Intel
Memory Size:
4Kbit
Voltage - Supply:
4.5V ~ 5.5V
Package / Case:
18-DIP
Memory Organization:
1K X 4
Operating Temperature:
-55°C ~ 125°C (TA)
Technology:
SRAM - Asynchronous
Access Time:
200 Ns
Memory Format:
SRAM
Introduction
SRAM - Asynchronous Memory IC 4Kbit Parallel 200 ns 18-DIP
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| Image | Part # | Description | |
|---|---|---|---|
|
|
GT28F320B3TA100 |
IC FLASH 32MBIT PAR 48UBGA CSP
|
|
|
|
PC28F320C3BD70A |
IC FLASH 32MBIT PAR 64EASYBGA
|
|
|
|
RC28F128P33T85A |
IC FLASH 128MBIT PAR 64EASYBGA
|
|
|
|
GT28F320C3BA110 |
IC FLASH 32MBIT PAR 48UBGA CSP
|
|
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|
N28F512200 |
IC FLASH 512KBIT PARALLEL 32PLCC
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|
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|
RD38F1020W0YTQ0SB93 |
IC FLASH RAM 32MBIT PAR 66SCSP
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|
RC28F128P33B85B |
IC FLASH 128MBIT CFI 64EASYBGA
|
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|
RC28F640P30B85A |
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|
|
|
|
5962-9089903MYA |
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RD28F1604C3TD70SB93 |
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|
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